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知乎，让每一次点击都充满意义 —— 欢迎来到知乎，发现问题背后的世界。
知乎，让每一次点击都充满意义 —— 欢迎来到知乎，发现问题背后的世界。
You may modify the stated parameters, and Assess it using a "great" result which usually takes two hours siumlation time. Based on your conditions, you may accelerate the simulation time.
So can any individual please demonstrate how FET with lower threshold voltage has larger velocity and higher leakage current when FET with large threshold will probably be gradual but minimal on power?
I have been looking to simulate a variable twin polarity electrical power supply procedure to filter noise and distortions to act as an influence supply to my ADC.
Which means I should simulate the circuit lots of situations to acquire the final results but The difficulty is that each simulation normally takes about two several hours and just makes the perform incredibly gradual.
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i had identical difficulty with PICs , cek tat the sample files operate in ordinary velocity, i cudnt deal with the situation fully, consider eliminating the crystal and putting mcu velocity at 1Mhz in its Attributes
* You may have several wires going to ground as a result of other wires. The simulator is employing cpu cycles needlessly to calculate latest in Individuals joined wires popular songs (No matter that their volt degree is zero). Give Each individual of Individuals wires its have ground.
Indeed since in LVT threshhold voltage is lower turning on from off posture will likely be speedy, but what about turning off the product from on position? given that click here threshhold voltage is very low (0.2V) When the utilized gate voltage is 1V it will require to fall atleast 0.8V to show from the LVT transistor.
The trouble is for my exploration I really need to do such things as sweep voltage, frequency, load resistance etc. to analyse their effect on the output
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T How for making the sub electric power area and prime electricity domain making use of exact same vss vdd Began by themanh246